HomedatasheetIRLR024NPBF

IRLR024NPBF Datasheet

MOSFET
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Description

The IRLR024NPBF is Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. IRLR024NPBF Features • Logic-Level Gate Drive• Surface Mount (IRLR024N)• Straight Lead (IRLU024N)• Advanced Process Technology• Fast Switching• Fully Avalanche Rated• Lead-Free
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"55 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"16 V "},{"Name":"Continuous Drain Current","Value":"17 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"110 mOhms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"DPAK "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

MOSPEC [MOSPEC SEMICONDUCTOR]
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