Home datasheet IRLR024TRPBF

IRLR024TRPBF

Transistors
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Description

Third generation power MOSFETs( IRLR024TRPBF ) from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. IRLR024TRPBF Features • Dynamic dV/dt Rating• Surface Mount (IRLR024, SiHLR024)• Straight Lead (IRLU024, SiHLU024)• Available in Tape and Reel• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• Fast Switching
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage:","Value":"60 V"},{"Name":" Gate-Source Breakdown Voltage:","Value":"+/- 10 V"},{"Name":" Continuous Drain Current:","Value":"14 A"},{"Name":" Drain-Source On Resistance:","Value":"100 mOhms"},{"Name":" Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":" Minimum Operating Temperature:","Value":"- 55 C"},{"Name":" Power Dissipation:","Value":"2.5 W"},{"Name":"Rise Time:","Value":"110 ns"},{"Name":"Typical Turn-Off Delay Time:","Value":"23 ns"},{"Name":" Fall Time:","Value":"41 ns"}]

Manufacturer information

SILICON LABORATORIES
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