HomedatasheetIRLR2905ZTRLPBF

IRLR2905ZTRLPBF Datasheet

Transistors
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Description

This IRLR2905ZTRLPBF Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. IRLR2905ZTRLPBF Features •Logic Level•Advanced Process Technology•Ultra Low On-Resistance•175°C Operating Temperature•Fast Switching•Repetitive Avalanche Allowed up to Tjmax•Lead-Free
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage: ","Value":"55 V "},{"Name":"Continuous Drain Current: ","Value":"60 A "},{"Name":"Resistance Drain-Source RDS (on): ","Value":"13.5 mOhms "},{"Name":"Maximum Operating Temperature: ","Value":"+ 175 C "},{"Name":"Fall Time: ","Value":"33 ns "},{"Name":"Forward Transconductance gFS (Max / Min): ","Value":"25 S "},{"Name":"Gate Charge Qg: ","Value":"35 nC "},{"Name":"Power Dissipation: ","Value":"110 W "},{"Name":"Rise Time: ","Value":"130 ns "},{"Name":"","Value":""}]

Manufacturer information

SEIKO INSTRUMENTS
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