HomedatasheetJANSH2N7270

JANSH2N7270 Datasheet

500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
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Description

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.

Features:
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight

Features

Parameters


Manufacturer information

INTERNATIONAL RECTIFIER
Warm Hint

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