K3236 Datasheet

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type


Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

1. 4-V gate drive
2. Low drain-source ON resistance: RDS (ON)= 13.5 mΩ(typ.)
3. High forward transfer admittance: |Yfs| = 42 S (typ.)
4. Low leakage current: IDSS= 100 μA (max) (VDS= 60 V)
5. Enhancement model: Vth= 1.3~2.5 V (VDS= 10 V, ID= 1 mA)




Manufacturer information

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