Home datasheet K3269

K3269

N-Channel Enhacement Mode MOSFET
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Description

N-Channel Enhacement Mode MOSFET

Features
4.5 V drive available
Low on-state resistance
  RDS(on)1=12m MAX. (VGS=10V,ID=18A)
Low gate charge
  QG= 30 nC TYP. (ID=35A,VDD=16V,VGS=10V)
Built-in gate protection diode
Surface mount device available

Features

Parameters


Manufacturer information

TY SEMICONDUCTOR
Warm Hint

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