HomedatasheetM29DW323DB90ZE6T

M29DW323DB90ZE6T Datasheet

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
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Description

SUMMARY DESCRIPTION
The M29DW323D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

FEATURES SUMMARY
■SUPPLY VOLTAGE
–VCC = 2.7V to 3.6V for Program, Erase and Read
–VPP=12V for Fast Program (optional)
■ACCESS TIME: 70, 90ns
■PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
■MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
■DUAL OPERATIONS
– Read in one bank while Program or Erase in other
■ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■VPP/WPPIN for FAST PROGRAM and WRITE PROTECT
■TEMPORARY BLOCK UNPROTECTION MODE
■COMMON FLASH INTERFACE
– 64 bit Security Code
■EXTENDED MEMORY BLOCK
– Extra block used as security block or to store additional information
■LOW POWER CONSUMPTION
– Standby and Automatic Standby
■100,000 PROGRAM/ERASE CYCLES per BLOCK
■ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB: 225Fh

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Manufacturer information

STMICROELECTRONICS

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends

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