HomedatasheetMBR1645

MBR1645 Datasheet

Schottky Diodes
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Description

• Low power loss, high efficiency.• High surge capacity.• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.• Metal silicon junction, majority carrier conduction.• High current capacity, low forward voltage drop.• Guard ring for over voltage protection.
Features

Parameters

[{"Name":"Peak Reverse Voltage","Value":"45 V "},{"Name":"Forward Continuous Current","Value":"16 A "},{"Name":"Max Surge Current","Value":"150 A"},{"Name":"Forward Voltage Drop","Value":"0.63 V"},{"Name":"Maximum Reverse Leakage Current","Value":"200 uA"},{"Name":"Operating Temperature Range","Value":"- 65 C to + 150 C "},{"Name":"Operating Temperature Range","Value":"- 65 C to + 150 C "},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

MOSPEC [MOSPEC SEMICONDUCTOR]
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