MBR3100G Datasheet

Schottky Diodes & Rectifiers


This MBR3100G device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,high−frequency inverters, free wheeling diodes, and polarity protection diodes. MBR3100G Features • Low Reverse Current• Low Stored Charge, Majority Carrier Conduction• Low Power Loss/High Efficiency• Highly Stable Oxide Passivated Junction• Guard−ring for Stress Protection• Low Forward Voltage• 175°C Operating Junction Temperature• High Surge Capacity• Pb−Free Packages are Available*


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Manufacturer information

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