MBRS240LT3G Datasheet

Diodes & Rectifiers


These devices( MBRS240LT3G ) employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. MBRS240LT3G Features • Compact Package with J−Bend Leads Ideal for Automated Handling• Highly Stable Oxide Passivated Junction• Guard−Ring for Overvoltage Protection• Low Forward Voltage Drop• ESD Ratings:-Human Body Model = 3B (> 16000 V)- Machine Model = C (> 400 V)• NRVB Prefix for Automotive and Other Applications Requiring -Unique Site and Control Change Requirements; -AEC−Q101 Qualified and PPAP Capable• All Packages are Pb−Free*


[{"Name":" Peak Reverse Voltage:","Value":"40 V"},{"Name":"Forward Continuous Current:","Value":"2 A"},{"Name":"Max Surge Current:","Value":"25 A"},{"Name":"Forward Voltage Drop:","Value":"0.54 V at 4 A"},{"Name":"Maximum Reverse Leakage Current:","Value":"2000 uA"},{"Name":"Operating Temperature Range:","Value":"- 55 C to + 125 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

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