MBRS330T3G Datasheet

Schottky Diodes & Rectifiers


These MBRS330T3G devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. MBRS330T3G Features • Small Compact Surface Mountable Package with J-Bend Leads• Rectangular Package for Automated Handling• Highly Stable Oxide Passivated Junction• Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C)• Excellent Ability to Withstand Reverse Avalanche Energy Transients• Guard-Ring for Stress Protection• Device Passes ISO 7637 Pulse #1• SBRS8 and NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable• These are Pb-Free Packages*


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Manufacturer information


Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.

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