HomedatasheetMJD112T4

MJD112T4 Datasheet

Transistors Darlington
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Description

The MJD112T4 is devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. MJD112T4 Features • Good hFE linearity• High fT frequency• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode MJD112T4 Applications • Linear and switching industrial equipment
Features

Parameters

[{"Name":"Configuration","Value":"Single "},{"Name":"Transistor Polarity ","Value":"NPN "},{"Name":"Collector- Emitter Voltage VCEO Max","Value":"100 V"},{"Name":"Emitter- Base Voltage VEBO ","Value":"5 V"},{"Name":"Collector- Base Voltage VCBO","Value":"100 V "},{"Name":"Maximum DC Collector Current","Value":"2 A "},{"Name":"Maximum Collector Cut-off Current ","Value":"20 uA "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Packaging ","Value":"Reel "}]

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