MJD32CT4 Datasheet

Transistors Bipolar - BJT


The MJD32CT4 device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. MJD32CT4 Features • Surface-mounting TO-252 power package in tape and reel• Complementary to the NPN type MJD31C


[{"Name":"Configuration","Value":"Single "},{"Name":"Transistor Polarity","Value":"PNP "},{"Name":"Collector- Base Voltage VCBO","Value":"100 V "},{"Name":"Collector- Emitter Voltage VCEO Max","Value":"100 V "},{"Name":"Emitter- Base Voltage VEBO","Value":"5 V "},{"Name":"Collector-Emitter Saturation Voltage","Value":"- 1.2 V "},{"Name":"Maximum DC Collector Current","Value":"3 A "},{"Name":"DC Collector/Base Gain hfe Min","Value":"20"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information


Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.

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