HomedatasheetMMUN2132LT1G

MMUN2132LT1G Datasheet

Transistors (BJT) - Single, Pre-Biased
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Description

The description of the MMUN2132LT1G is trans brt pnp 50v sot-23. This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. MMUN2132LT1G Features • Simplifies Circuit Design• Reduces Board Space• Reduces Component Count• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Features

Parameters

[{"Name":"Transistor Type","Value":"PNP - Pre-Biased"},{"Name":"Current - Collector (Ic) (Max)","Value":"100mA"},{"Name":"Voltage - Collector Emitter Breakdown (Max)","Value":"50V"},{"Name":"Resistor - Base (R1) (Ohms)","Value":"4.7k"},{"Name":"Resistor - Emitter Base (R2) (Ohms)","Value":"4.7k"},{"Name":"DC Current Gain (hFE) (Min) @ Ic, Vce","Value":"15 @ 5mA, 10V"},{"Name":"Vce Saturation (Max) @ Ib, Ic","Value":"250mV @ 1mA, 10mA"},{"Name":"Current - Collector Cutoff (Max)","Value":"500nA"},{"Name":"Power - Max","Value":"246mW"},{"Name":"","Value":""}]

Manufacturer information

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