HomedatasheetMOCD217R2VM

MOCD217R2VM Datasheet

Transistor Output Optocouplers
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Description

The MOCD217R2VM device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting. MOCD217R2VM Features • UL Recognized (File #E90700, Volume 2)• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD217VM)• Low Input Current (specified @ 1mA)• Minimum BVCEO of 30 Volts Guaranteed• Convenient Plastic SOIC-8 Surface Mountable Package Style• Standard SOIC-8 Footprint, with 0.050" Lead Spacing• High Input-Output Isolation of 2500 VAC(rms) Guaranteed MOCD217R2VM Applications • Interfacing and Coupling Systems of Different Potentials and Impedances• General Purpose Switching Circuits• Monitor and Detection Circuits
Features

Parameters

[{"Name":"Maximum Collector Emitter Voltage:","Value":"30 V"},{"Name":"Maximum Collector Emitter Saturation Voltage:","Value":"0.4 V"},{"Name":" Isolation Voltage:","Value":"2500 Vrms"},{"Name":"Maximum Forward Diode Voltage:","Value":"1.3 V"},{"Name":" Maximum Input Diode Current:","Value":"60 mA"},{"Name":"Maximum Collector Current:","Value":"150 mA"},{"Name":"Maximum Power Dissipation:","Value":"250 mW"},{"Name":"Maximum Operating Temperature:","Value":"+ 100 C"},{"Name":"Minimum Operating Temperature:","Value":"- 40 C"},{"Name":"","Value":""}]

Manufacturer information

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