HomedatasheetMTW32N20E

MTW32N20E Datasheet

MOSFET
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Description

This MTW32N20E advanced Power MOSFET is designed to withstand highenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain−to−source diode with a fastrecovery time. Designed for low voltage, high speed switchingapplications in power supplies, converters and PWM motor controls,these devices are particularly well suited for bridge circuits wherediode speed and commutating safe operating areas are critical andoffer additional safety margin against unexpected voltage transients. MTW32N20E Features • Avalanche Energy Specified• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Isolated Mounting Hole• Pb−Free Package is Available*
Features

Parameters

[{"Name":"RoHS","Value":"No"},{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"200 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V "},{"Name":"Continuous Drain Current","Value":"32 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.075 Ohms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"Through Hole"},{"Name":"Package / Case","Value":"TO-247 "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

FUXIN JIEKEDA ELECTRONIC CO.,LTD.
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