Home datasheet N04Q1630C2Bx-70C

N04Q1630C2Bx-70C

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction
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Description

The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide ultra-low active and standby power
Features
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
2.3V - 2.7V
2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
2.5V Vcc with 3V VccQ
Features

Parameters


Manufacturer information

ETC
Warm Hint

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