Home datasheet N0600N-S17-AY

N0600N-S17-AY

MOS FIELD EFFECT TRANSISTOR
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Description

Description
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features
•  Low on-state resistance
  ⎯ RDS(on)1= 25 mΩMAX. (VGS=10 V, ID= 15 A)
  ⎯ RDS(on)2= 36 mΩMAX. (VGS= 4.5 V, ID= 15 A)
•  Low input capacitance
  ⎯ Ciss= 1380 pF TYP. (VDS= 10 V, VGS= 0 V)

Features

Parameters


Manufacturer information

RENESAS ELECTRONICS

Renesas Electronics is a semiconductor company with an outstanding portfolio of global market-leading products. Renesas has the technology and capabilities to deliver almost everything required in an age focusing on human needs, including security technologies, miniaturization and power-saving technologies, networking, and interface technologies. Renesas aims to stay one step ahead and to be the true intelligent chip solution provider — the world leader in its field.

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