The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
• Low on-state resistance
⎯ RDS(on)1= 25 mΩMAX. (VGS=10 V, ID= 15 A)
⎯ RDS(on)2= 36 mΩMAX. (VGS= 4.5 V, ID= 15 A)
• Low input capacitance
⎯ Ciss= 1380 pF TYP. (VDS= 10 V, VGS= 0 V)
Renesas Electronics is a semiconductor company with an
outstanding portfolio of global market-leading products. Renesas has the
technology and capabilities to deliver almost everything required in an
age focusing on human needs, including security technologies,
miniaturization and power-saving technologies, networking, and interface
technologies. Renesas aims to stay one step ahead and to be the true
intelligent chip solution provider — the world leader in its field.