Home datasheet N08L1618C2AB

N08L1618C2AB

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
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Description

Overview
The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low power.

Features
• Single Wide Power Supply Range
  1.65 to 2.2 Volts
• Very low standby current
  0.5µA at 1.8V (Typical)
• Very low operating current
  1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
  0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
  Dual Chip Enables (CE1and CE2)
  Byte control for independent byte operation
  Output Enable (OE) for memory expansion
• Low voltage data retention
   Vcc = 1.2V
• Very fast output enable access time
  25ns OEaccess time
• Very fast Page Mode access time
  tAAP = 25ns
• Automatic power down to standby mode
• TTL compatible three-state output driver

Features

Parameters


Manufacturer information

NANOAMP SOLUTIONS, INC.
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