Home datasheet N08L163WC2A

N08L163WC2A

8Mb Ultra-Low Power Asynchronous CMOS SRAM
Share:
Manufacturer

Description

The N08L163WC2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

Features
• Single Wide Power Supply Range
  2.3 to 3.6 Volts
• Very low standby current
  4.0µA at 3.0V (Typical)
• Very low operating current
  2.0mA at 3.0V and 1µs(Typical)
• Very low Page Mode operating current
  1.0mA at 3.0V and 1µs (Typical)

 

Features

Parameters


Manufacturer information

ETC
Warm Hint

What HQEW.NET can offer here?
1. www.hqew.net/product-data provides numerous and various electronic part data-sheet and technology document here., if it can't be shown, Please feel free to ask us for it.
2. www.hqew.net/news provides the latest information of the semiconductor industry or the electronics industry for you.
3. www.hqew.net provides verified suppliers and numerous electronic components for your demand and business.
Any questions you can contact us by email support@hqew.net.
Request for Datasheet

  • Part No     :
  • Your Email:
  • Content     :

Other products data
Post Buying Request
Latest News & Exhibitons
Contact Us

+86-755-83536845

One to One Customer Service

17190417227