HomedatasheetNDC7001C

NDC7001C Datasheet

MOSFET
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Description

These NDC7001C dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications. NDC7001C Features • Q1 0.51 A, 60V. RDS(ON) = 2 Ω @ VGS = 10 V RDS(ON) = 4 Ω @ VGS = 4.5 V• Q2 –0.34 A, 60V. RDS(ON) = 5 Ω @ VGS = –10 V RDS(ON) = 7.5Ω @ VGS = –4.5 V• High saturation current• High density cell design for low RDS(ON)• Proprietary SuperSOTTM –6 package: design using copper lead frame for superior thermal and electrical capabilities
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N and P-Channel"},{"Name":"Drain-Source Breakdown Voltage","Value":"+/- 60 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V "},{"Name":"Continuous Drain Current","Value":"0.51 A"},{"Name":"Drain-Source On Resistance","Value":"1 Ohms "},{"Name":"Configuration","Value":"Dual "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"SSOT-6"},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]

Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.


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