HomedatasheetNDS355N

NDS355N Datasheet

MOSFET
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Description

These NDS355N is N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,and low in-line power loss are needed in a very small outline surface mount package. NDS355N Features • 1.6A, 30V. RDS(ON) = 0.125W @ VGS = 4.5V.• Proprietary package design using copper lead frame for superior thermal and electrical capabilities.• High density cell design for extremely low RDS(ON).• Exceptional on-resistance and maximum DC current capability.• Compact industry standard SOT-23 surface mount package
Features

Parameters

[{"Name":"Transistor Polarity ","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage ","Value":"30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V "},{"Name":"Continuous Drain Current ","Value":"1.6 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"85 mOhms"},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style ","Value":"SMD/SMT"},{"Name":"Package / Case","Value":"SuperSOT-3 "},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

SILICON LABORATORIES
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