NTD2955PT4G Datasheet



This NTD2955PT4G is Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, highspeed switching applications in power supplies, converters, and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. NTD2955PT4G Features • Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes• Pb−Free Packages are Available


[{"Name":"Transistor Polarity","Value":"P-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"- 60 V "},{"Name":"Continuous Drain Current","Value":"- 12 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.155 Ohms "},{"Name":"Configuration","Value":"Single"},{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"DPAK "},{"Name":"Packaging","Value":"Reel "},{"Name":"Fall Time","Value":"48 ns "}]

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