HomedatasheetNTJS3151PT1

NTJS3151PT1 Datasheet

FETs - Single
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Description

The description of the NTJS3151PT1 is MOSFET P-CH 12V 2.7A SOT-363. NTJS3151PT1 Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)• Gate Diodes for ESD Protection• Pb−Free Packages are Available NTJS3151PT1 Applications • High Side Load Switch• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss)","Value":"12V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"2.7A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"60 mOhm @ 3.3A, 4.5V"},{"Name":"Vgs(th) (Max) @ Id","Value":"400mV @ 100μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"8.6nC @ 4.5V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"850pF @ 12V"},{"Name":"Power - Max","Value":"625mW"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

PANASONIC ELECTRONIC COMPONENTS
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