HomedatasheetOPA843IDR

OPA843IDR Datasheet

High Speed Operational Amplifiers
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Description

The OPA843IDR provides a level of speed and dynamic range previously unattainable in a monolithic op amp. Using a high Gain Bandwidth (GBW), two gain-stage design, the OPA843IDR gives a medium gain range device with exceptional dynamic range. The “classic” differential input complements this high dynamic range with DC precision beyond most high-speed amplifier products. Very low input offset voltage and current,high Common-Mode Rejection Ratio (CMRR) and Power-Supply Rejection Ratio (PSRR), and high open-loop gain combine to give a high DC precision amplifier along with low noise and high 3rd-order intercept. OPA843IDR Features • High bandwidth: 260mhz (g = +5)• Gain bandwidth product: 800mhz• Low input voltage noise: 2.0nv/√hz• Very low distortion: –96dbc (5mhz)• High open-loop gain: 110db• Fast 12-bit settling: 10.5ns (0.01%)• Low input offset voltage: 300μv• Output current: ±100ma OPA843IDR Applications • Adc/dac buffer amplifier• Low distortion “if” amplifier• Active filters• Low-noise receiver• Wideband transimpedance• Test instrumentation• Professional audio• Opa643 upgrade
Features

Parameters

[{"Name":"Number of Channels ","Value":"1"},{"Name":"Voltage Gain dB ","Value":"110 dB "},{"Name":"Input Offset Voltage","Value":"1.2 mV "},{"Name":"Slew Rate","Value":"1000 V/us"},{"Name":"Operating Supply Voltage ","Value":"12 V "},{"Name":"Supply Current ","Value":"20.8 mA"},{"Name":"Maximum Operating Temperature","Value":"+ 85 C "},{"Name":"Mounting Style ","Value":"SMD/SMT"},{"Name":"Package / Case ","Value":"SOIC-8 "},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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