HomedatasheetREF192ESZ

REF192ESZ Datasheet

Voltage & Current References
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Description

The REF192ESZ series precision band gap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable, thin-film resistors to achieve a very low temperature coefficient and high initial accuracy.The REF192ESZ series is made up of micropower, low dropout voltage (LDV) devices, providing stable output voltage from supplies as low as 100 mV above the output voltage and consuming less than 45 μA of supply current. In sleep mode, which is enabled by applying a low TTL or CMOS level to the SLEEP pin, the output is turned off, and supply current is further reduced to less than 15 μA. REF192ESZ Features • Initial accuracy: ±2 mV maximum• Temperature coefficient: 5 ppm/°C maximum• Low supply current: 45 μA maximum• Sleep mode: 15 μA maximum• Low dropout voltage• Load regulation: 4 ppm/mA• Line regulation: 4 ppm/V• High output current: 30 mA• Short-circuit protection REF192ESZ Applications • Portable instruments• ADCs and DACs• Smart sensors• Solar-powered applications• Loop current-powered instruments
Features

Parameters

[{"Name":"Topology","Value":"Series References "},{"Name":"Output Voltage ","Value":"2.5 V "},{"Name":"Initial Accuracy","Value":"2 mV"},{"Name":"Average Temperature Coefficient (Typ) ","Value":"5 PPM / C "},{"Name":"Shunt Current (Max) ","Value":"30 mA "},{"Name":"Maximum Operating Temperature","Value":"+ 85 C "},{"Name":"Package / Case ","Value":"+ 85 C "},{"Name":"Packaging ","Value":"Tube "}]

Manufacturer information

TELCOM [TELCOM SEMICONDUCTOR, INC]
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