RFD16N05SM9A Datasheet



The RFD16N05SM9A N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. RFD16N05SM9A Features • 16A, 50V• rDS(ON) = 0.047Ω• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve • 175℃Operating Temperature• Related Literature:TB334 “Guidelines for Soldering Surface Mount Components to PC Boards


[{"Name":"Drain-Source Breakdown Voltage","Value":"50 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 20 V"},{"Name":"Continuous Drain Current","Value":"16 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.047 Ohms"},{"Name":"Maximum Operating Temperature","Value":"+ 175 C"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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