RFD3055LESM Datasheet



These RFD3055LESM is N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature size sapproaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. RFD3055LESM Features • 11A, 60V• RDS(ON) = 0.107• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


[{"Name":"Transistor Polarity ","Value":"N-Channel"},{"Name":"Drain-Source Breakdown Voltage ","Value":"60 V "},{"Name":"Gate-Source Breakdown Voltage ","Value":"+/- 16 V "},{"Name":"Continuous Drain Current","Value":"11 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.107 Ohms"},{"Name":"Configuration","Value":"Single"},{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Mounting Style","Value":"SMD/SMT"},{"Name":"Package / Case ","Value":"TO-252AA "},{"Name":"Packaging ","Value":"Tube "}]

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