HomedatasheetRFD3055SM

RFD3055SM Datasheet

N-Channel Power MOSFETs
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Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. RFD3055SM Features • 12A, 60V• rDS(ON)= 0.150Ω• Temperature Compensating PSPICE®Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175°C Operating Temperature• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss)","Value":"60V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"12A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"150 mOhm @ 12A, 10V"},{"Name":"Vgs(th) (Max) @ Id","Value":"4V @ 250μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"23nC @ 20V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"300pF @ 25V"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

HTC [HTC KOREA TAEJIN TECHNOLOGY CO.]
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