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S05A80P Datasheet

Schottky Barrier Rectifiers
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Description

Schottky Barrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation metal overlay contact.
Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalance
* Guard-Ring for Stress Protection
* Low Power Loss & High efficiency.
* 125°C Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction
* Plastic Material used Carries Underwriters Laboratory
   Flammability Classification 94V-O

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Manufacturer information

MOSPEC SEMICONDUCTOR
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