HomedatasheetS25FL016A0LMFI011

S25FL016A0LMFI011 Datasheet

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Description

The S25FL016A0LMFI011 is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consistsof thirty-two sectors, each with 512 Kb memory.The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices aredesigned to be programmed in-system with the standard system 3.0 volt VCC supply.The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The devicesupports Sector Erase and Bulk Erase commands.Each device requires only a 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions. Internallygenerated and regulated voltages are provided for the program operations. This device does not require aVPP supply. S25FL016A0LMFI011 Features • Single power supply operation Full voltage range: 2.7 to 3.6 V read and program operations• Memory Architecture Thirty-two sectors with 512 Kb each• Program Page Program (up to 256 bytes) in 1.4 ms (typical) Program operations are on a page by page basis• Erase 0.5 s typical sector erase time 10 s typical bulk erase time• Cycling Endurance 100,000 cycles per sector typical• Data Retention 20 years typical• Device ID JEDEC standard two-byte electronic signature RES command one-byte electronic signature for backwardcompatibility• Process Technology Manufactured on 0.20 μm MirrorBitTM process technology• Package Option Industry Standard Pinouts 16-pin SO package (300 mils) 8-pin SO package (208 mils) 8-Contact WSON Package (6x8 mm), Pb Free
Features

Parameters

[{"Name":"Data Bus Width: ","Value":"1 bit "},{"Name":"Memory Size: ","Value":"16 Mbit "},{"Name":"Supply Voltage - Max: ","Value":"3.6 V "},{"Name":"Supply Voltage - Min: ","Value":"2.7 V "},{"Name":"Maximum Operating Current: ","Value":"28 mA "},{"Name":"Operating Temperature: ","Value":"+ 85 C "},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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