HomedatasheetS29GL032N11DFI030

S29GL032N11DFI030 Datasheet

64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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Description

General Description
The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032N is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
■ Manufactured on 110 nm MirrorBit process technology
■ Secured Silicon Sector region
   – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
   – Programmed and locked at the factory or by the customer
■ Flexible sector architecture
   – 64Mb (uniform sector models): One hundred twenty-eight 32 Kword (64 KB) sectors
   – 64 Mb (boot sector models): One hundred twenty-seven 32 Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors
   – 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors
   – 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors
■ Enhanced VersatileI/O™ Control
   – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ Compatibility with JEDEC standards
   – Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles typical per sector
■ 20-year data retention typical

Performance Characteristics
■ High performance
   – 90 ns access time
   – 8-word/16-byte page read buffer
   – 25 ns page read time
   – 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates

■ Low power consumption
   – 25 mA typical initial read current, 1 mA typical page read current
   – 50 mA typical erase/program current
   – 1 µA typical standby mode current
■ Package options
   – 48-pin TSOP
   – 56-pin TSOP
   – 64-ball Fortified BGA
   – 48-ball fine-pitch BGA

Software & Hardware Features
■ Software features
– Advanced Sector Protection: offers Persistent Sector Protection and Password Sector Protection
– Program Suspend & Resume: read other sectors before programming operation is completed
– Erase Suspend & Resume: read/program other sectors before an erase operation is completed
– Data# polling & toggle bits provide status
– CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
– Unlock Bypass Program command reduces overall multiple-word programming time
■ Hardware features
   – WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models
   – Hardware reset input (RESET#) resets device
   – Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Features

Parameters


Manufacturer information

SPANSION INC.
Warm Hint

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