SI4410DYTRPBF Datasheet



The SI4410DYTRPBF is N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. SI4410DYTRPBF Features • Low on-state resistance• Fast switching• TrenchMOS™ technology SI4410DYTRPBF Applications • DC to DC convertors• DC motor control• Lithium ion battery applications• Notebook PC


[{"Name":"Transistor Polarity ","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage ","Value":"30 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"20 V "},{"Name":"Continuous Drain Current ","Value":"10 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"20 mOhms "},{"Name":"Configuration","Value":"Single Quad Drain Triple Source "},{"Name":"Maximum Operating Temperature ","Value":"+ 150 C "},{"Name":"Mounting Style ","Value":"SMD/SMT "},{"Name":"Package / Case ","Value":"SOIC-8 "},{"Name":"Packaging","Value":"Reel "}]

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