HomedatasheetSI9976DY-T1-E3

SI9976DY-T1-E3 Datasheet

Gate Drivers
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Description

The Si9976( SI9976DY-T1-E3 ) is an integrated driver for an n-channel MOSFET half-bridge. Schmitt trigger inputs provide logic signal compatibility and hysteresis for increased noise immunity. An internal low-voltage regulator allows the device to be powered directly from a system supply of 20 to 40 volts. Both half-bridge n-channel gates are driven directly with low-impedance outputs. Addition of one external capacitor allows an internal circuit to level shift both the power supply and logic signal for the half-bridge high-side n-channel gate drive. An internal charge pump replaces leakage current lost in the high-side driver circuit to provide “static” (dc) operation in any output condition. Protection features include an undervoltage lockout, cross-conduction prevention logic, and a short circuit monitor. The Si9976 is available in both standard and lead (Pb)-free, 14-pin SOIC (surface mount) packages, specified to operate over the industrial (−40 to 85C) temperature range. SI9976DY-T1-E3 Features • Single Input for High-Side and Low-Side MOSFETs• 20- to 40-V Supply• Static (dc) Operation• Cross-Conduction Protected• Undervoltage Lockout• ESD and Short Circuit Protected• Fault FeedbackSI9976DY-T1-E3 Applications • Power Supplies• Motor Drives• Office Automation• Computer Peripherals• Industrial Controllers• Robotics• Medical Equipment
Features

Parameters

[{"Name":"Number of Drivers:","Value":"2"},{"Name":" Rise Time:","Value":"110 ns"},{"Name":"Fall Time:","Value":"50 ns"},{"Name":"Supply Voltage - Min:","Value":"20 V"},{"Name":"Supply Current:","Value":"0.01 mA "},{"Name":"Maximum Power Dissipation:","Value":"1000 mW"},{"Name":"Maximum Operating Temperature:","Value":"+ 85 C"},{"Name":"Minimum Operating Temperature:","Value":"- 40 C"},{"Name":"Number of Outputs:","Value":"2"},{"Name":"","Value":""}]

Manufacturer information

DIODES INCORPORATED

Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets.
Diodes’ products include diodes, rectifiers, transistors, MOSFETs, protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors, power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers.
Diodes’ corporate headquarters and Americas’ sales office are located in Plano, Texas and Milpitas, California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taiwan; Taoyuan City, Taiwan; Zhubei City, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes’ wafer fabrication facilities are located in Manchester and Shanghai, China. Diodes has assembly and test facilities located in Shanghai, Jinan, Chengdu, and Yangzhou, China, as well as in Hong Kong, Neuhaus and Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; and Munich, Germany, with support offices throughout the world.

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