HomedatasheetSPA04N80C3

SPA04N80C3 Datasheet

Transistors
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Description

The SPA04N80C3 is designed for Industrial application with high DC bulk voltage SPA04N80C3 Features • New revolutionary high voltage technology• Extreme dv/dt rated• High peak current capability• Qualified according to JEDEC1) for target applications• Pb-free lead plating; RoHS compliant• Ultra low gate charge• Ultra low effective capacitances• Fully isolated package (2500 VAC; 1 minute)
Features

Parameters

[{"Name":" Drain-Source Breakdown Voltage:","Value":"800 V"},{"Name":" Gate-Source Breakdown Voltage:","Value":"+/- 20 V"},{"Name":"Continuous Drain Current:","Value":"4 A"},{"Name":" Resistance Drain-Source RDS (on):","Value":"1.3 Ohms"},{"Name":"Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":"Power Dissipation:","Value":"38 W"},{"Name":"Rise Time:","Value":"15 ns"},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

MOSPEC [MOSPEC SEMICONDUCTOR]
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