HomedatasheetSPA11N65C3XKSA1

SPA11N65C3XKSA1 Datasheet

Transistors
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Description

The description of the SPA11N65C3XKSA1 is MOSFET COOL MOS PWR TRANS 650V 11A.( SPA11N65C3 ) SPA11N65C3XKSA1 Features • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• High peak current capability• Improved transconductance
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage: ","Value":"650 V "},{"Name":"Gate-Source Breakdown Voltage: ","Value":"+/- 20 V "},{"Name":"Continuous Drain Current: ","Value":"11 A "},{"Name":"Resistance Drain-Source RDS (on): ","Value":"380 mOhms "},{"Name":"Configuration","Value":"Single"},{"Name":"Maximum Operating Temperature: ","Value":"+ 150 C "},{"Name":"Fall Time: ","Value":"5 ns "},{"Name":"Minimum Operating Temperature: ","Value":"- 55 C "},{"Name":"Power Dissipation: ","Value":"33 W "},{"Name":"Rise Time: ","Value":"5 ns "}]

Manufacturer information

SILICON LABORATORIES
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