HomedatasheetSSU2N60

SSU2N60 Datasheet

Transistors
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Description

The description of SSU2N60 is MOSFET N-Ch/600V/1.8a/5Ohm SSU2N60 Features • Avalanche Rugged Technology• Rugged Gate Oxide Technology • Lower Input Capacitance• Improved Gate Charge• Extended Safe Operating Area• Lower Leakage Current : 25 mA (Max.) @ VDS = 600V• Lower RDS(ON) : 3.892 W (Typ.)
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"600 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V"},{"Name":"Continuous Drain Current","Value":"1.8 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"5 Ohms"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"1.85 S"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

GESS [GE SOLID STATE]
Warm Hint

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