HomedatasheetSTB12NM50T4

STB12NM50T4 Datasheet

MOSFET
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Description

The STB12NM50T4 MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. STB12NM50T4 Features • High dv/dt and avalanche capabilities• Low input capacitance and gate charge• 100% avalanche tested• Low gate input resistance• Tight process control and high manufacturing yields
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"500 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V "},{"Name":"Continuous Drain Current","Value":"12 A "},{"Name":"Drain-Source On Resistance","Value":"350 mOhms "},{"Name":"Configuration","Value":"Single "},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

MOSPEC [MOSPEC SEMICONDUCTOR]
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