HomedatasheetSTD5NK40ZT4

STD5NK40ZT4 Datasheet

MOSFET
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Description

The STD5NK40ZT4 SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. STD5NK40ZT4 Features • Typical Rds(On) = 1.47• Extremely High Dv/Dt Capability• 100% Avalanche Tested• Gate Charge Minimized• Very Low Intrinsic Capacitances• Very Good Manufacturing Repeatibility
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"400 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V "},{"Name":"Continuous Drain Current","Value":"3 A "},{"Name":"Drain-Source On Resistance","Value":"1.8 Ohms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"SMD/SMT "},{"Name":"Package / Case","Value":"TO-252 "},{"Name":"Packaging","Value":"Reel "}]

Manufacturer information

SEIKO INSTRUMENTS
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