HomedatasheetSTF13NM60N

STF13NM60N Datasheet

Transistors
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Description

These devices( STF13NM60N ) are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. STF13NM60N Features • 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistance STF13NM60N Applications • Switching applications
Features

Parameters

[{"Name":" Drain-Source Breakdown Voltage:","Value":"600 V"},{"Name":"Gate-Source Breakdown Voltage:","Value":"+/- 25 V"},{"Name":"Continuous Drain Current:","Value":"11 A"},{"Name":"Drain-Source On Resistance:","Value":"360 mOhms"},{"Name":" Maximum Operating Temperature:","Value":"+ 150 C"},{"Name":"Minimum Operating Temperature:","Value":"- 55 C"},{"Name":" Fall Time:","Value":"10 ns"},{"Name":"Power Dissipation:","Value":"25 W"},{"Name":"Rise Time:","Value":"8 ns"},{"Name":"Typical Turn-Off Delay Time:","Value":"30 ns"}]

Manufacturer information

ROHM
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