HomedatasheetSTF21NM60N

STF21NM60N Datasheet

MOSFET
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Description

The STF21NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on-resistance and gate charge.It is therefore suitable for the most demanding high efficiency converters. STF21NM60N Features • 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistance
Features

Parameters

[{"Name":"Transistor Polarity ","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage ","Value":"600 V"},{"Name":"Gate-Source Breakdown Voltage ","Value":"+/- 25 V"},{"Name":"Continuous Drain Current","Value":"17 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.18 Ohms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Mounting Style ","Value":"Through Hole"},{"Name":"Package / Case","Value":"TO-220FP"},{"Name":"Packaging","Value":""}]

Manufacturer information

SEMTECH [SEMTECH CORPORATION]
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