HomedatasheetSTFW3N150

STFW3N150 Datasheet

MOSFET
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Description

These STFW3N150 Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. STFW3N150 Features • 100% avalanche tested• Intrinsic capacitances and Qgminimized• High speed switching• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"1500 V "},{"Name":"Continuous Drain Current","Value":"2.5 A "},{"Name":"Drain-Source On Resistance","Value":"9 Ohms"},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Packaging","Value":"Tube"}]

Manufacturer information

SIEMENS [SIEMENS SEMICONDUCTOR GROUP]

Electrification, automation and digitalization are the long-term growth fields of Siemens. In order to take full advantage of the market potential in these fields, our businesses are bundled into eight divisions and Siemens Healthineers as well as Siemens Wind Power as a separately managed businesses.


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