STP10NK60Z Datasheet

FETs - Single


The SuperMESH™ series is obtained through an extreme optimization of STP10NK60Z well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. STP10NK60Z Features • typical rds(on) = 0.65 ω• extremely high dv/dt capability• 100% avalanche tested• gate charge minimized• very low intrinsic capacitances• very good manufacturing repeability STP10NK60Z Applications • high current, high speed switching • ideal for off-line power supplies, adaptor and pfc• lighting


[{"Name":"Drain to Source Voltage (Vdss) ","Value":"600V"},{"Name":"Current - Continuous Drain (Id) @ 25° C ","Value":"10A (Tc) "},{"Name":"Rds On (Max) @ Id, Vgs ","Value":"750 mOhm @ 4.5A, 10V "},{"Name":"Vgs(th) (Max) @ Id ","Value":"4.5V @ 250μA "},{"Name":"Gate Charge (Qg) @ Vgs ","Value":"70nC @ 10V "},{"Name":"Input Capacitance (Ciss) @ Vds ","Value":"1370pF @ 25V "},{"Name":"Power - Max ","Value":"115W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

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