HomedatasheetSTP11NM60

STP11NM60 Datasheet

Power MOSFET
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Description

The STP11NM60 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. STP11NM60 Features • High dv/dt and avalanche capabilities• 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistance STP11NM60 Applications • Switching application
Features

Parameters

[{"Name":"Drain to Source Voltage (Vdss)","Value":"650V"},{"Name":"Current - Continuous Drain (Id) @ 25° C","Value":"11A"},{"Name":"Rds On (Max) @ Id, Vgs","Value":"450 mOhm @ 5.5A, 10V"},{"Name":"Vgs(th) (Max) @ Id","Value":"5V @ 250μA"},{"Name":"Gate Charge (Qg) @ Vgs","Value":"30nC @ 10V"},{"Name":"Input Capacitance (Ciss) @ Vds","Value":"1000pF @ 25V"},{"Name":"Power - Max","Value":"160W"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

ESTEK [ESTEK ELECTRONICS CO. LTD]
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