HomedatasheetSTP11NM60FP

STP11NM60FP Datasheet

MOSFET
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Description

The STP11NM60FP MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. STP11NM60FP Features • High dv/dt and avalanche capabilities• 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistance
Features

Parameters

[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"600 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V "},{"Name":"Continuous Drain Current","Value":"11 A "},{"Name":"Drain-Source On Resistance","Value":"450 mOhms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-220FP "},{"Name":"Packaging","Value":"Tube "}]

Manufacturer information

SILICON LABORATORIES
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