HomedatasheetSTP12NM50FP

STP12NM50FP Datasheet

Transistors
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Description

The STP12NM50FP is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. STP12NM50FP Features • High dv/dt and avalanche capabilities• Low input capacitance and gate charge• 100% avalanche tested• Low gate input resistance • Tight process control and high manufacturing yields STP12NM50FP Applications • Switching application
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"500 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V"},{"Name":"Continuous Drain Current","Value":"12 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.35 Ohms"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"5.5 S"},{"Name":"Minimum Operating Temperature","Value":"- 65 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

TEXAS INSTRUMENTS TEXAS INSTRUMENTS
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