HomedatasheetSTP16NF06

STP16NF06 Datasheet

Power Mosfet
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Description

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. STP16NF06 Feature Exceptional dv/dt capabilityLow gate charge at 100°CApplication oriented characterization ST16NF06 Applications Switching application
Features

Parameters

[{"Name":"Maximum Operating Temperature","Value":"+ 175 C "},{"Name":"Minimum Operating Temperature","Value":"- 55 C "},{"Name":"Drain-Source Breakdown Voltage","Value":"60 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 16 V"},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.08 Ohms "},{"Name":"Forward Transconductance gFS (Max / Min)","Value":"17 S"},{"Name":"Power Dissipation","Value":"45 W "},{"Name":"Typical Turn-Off Delay Time","Value":"20 ns "},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

SECOS [SECOS HALBLEITERTECHNOLOGIE GMBH]
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