STP25NM50N Datasheet



The STP25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. STP25NM50N Features • High dv/dt and avalanche capabilities• 100% avalanche tested• Low input capacitance and gate charge• Low gate input resistancedescriptionthe STP25NM50N Applications The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


[{"Name":"Transistor Polarity","Value":"N-Channel "},{"Name":"Drain-Source Breakdown Voltage","Value":"500 V "},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 25 V "},{"Name":"Continuous Drain Current","Value":"21.5 A "},{"Name":"Resistance Drain-Source RDS (on)","Value":"0.14 Ohms "},{"Name":"Configuration","Value":"Single "},{"Name":"Maximum Operating Temperature","Value":"+ 150 C "},{"Name":"Mounting Style","Value":"Through Hole "},{"Name":"Package / Case","Value":"TO-220 "},{"Name":"Packaging","Value":"Tube "}]

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