HomedatasheetSTP4NK60ZFP

STP4NK60ZFP Datasheet

Transistors
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Description

STP4NK60ZFP These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. STP4NK60ZFP Features • 100% avalanche tested• Very low intrinsic capacitances• Zener-protected STP4NK60ZFP Applications • Switching applications
Features

Parameters

[{"Name":"Drain-Source Breakdown Voltage","Value":"600 V"},{"Name":"Gate-Source Breakdown Voltage","Value":"+/- 30 V"},{"Name":"Continuous Drain Current","Value":"4 A"},{"Name":"Resistance Drain-Source RDS (on)","Value":"2 Ohms"},{"Name":"Maximum Operating Temperature","Value":"+ 150 C"},{"Name":"Fall Time","Value":"16.5 ns"},{"Name":"Minimum Operating Temperature","Value":"- 55 C"},{"Name":"","Value":""},{"Name":"","Value":""},{"Name":"","Value":""}]

Manufacturer information

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